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PZT2222A
NPN Silicon
Elektronische Bauelemente General Purpose Transistor
RoHS Compliant Product
SOT-223
C
1. BASE
FEATURES 2. COLLECTOR
E 3. EMITTER
C
Power dissipation B
P CM : 1 W Tamb=25
Collector current
I CM : 0.6 A
Collector-base voltage
V (BR)CBO : 75 V
Operating and storage junction temperature range
1 2 3
T J Tstg: -55 to +150 Unit : mm
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 10 A IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10 A IC=0 6 V
Collector cut-off current ICBO VCB=60V , IE=0 0. 01 A
Emitter cut-off current IEBO VEB= 3V , IC=0 0. 01 A
hFE(1) VCE=10V, IC= 0.1mA 35
hFE(2) VCE=10V, IC= 1mA 50
hFE(3) VCE=10V, IC= 10mA 75
DC current gain
hFE(4) VCE=10V, IC= 150mA 100 300
hFE(5) VCE=1V, IC= 150mA 50
hFE(6) VCE=10V, IC= 500mA 40
VCE(sat) IC=500 mA, IB= 50mA 1 V
Collector-emitter saturation voltage
VCE(sat) IC=150 mA, IB= 15mA 0.3 V
VBE(sat) IC=500 mA, IB= 50mA 2.0 V
Base-emitter saturation voltage
VBE(sat) IC=150 mA, IB=15mA 0.6 1.2 V
VCE=20V, IC= 20mA
Transition frequency fT 300 MHz
f=100MHz
VCB=10V, I E= 0
Output Capacitance Cob 8 pF
f=1MHz
Delay time td VCC=30V, IC=150mA
10 nS
Rise time tr VBE(off)=0.5V,IB1=15mA
25 nS
Storage time tS VCC=30V, IC=150mA
225 nS
Fall time tf IB1= IB2= 15mA
60 nS
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 4
PZT2222A
NPN Silicon
Elektronische Bauelemente General Purpose Transistor
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V +30 V
1.0 to 100 s, 1.0 to 100 s, 200
200 +16 V
+16 V DUTY CYCLE 2.0% DUTY CYCLE 2.0%
0 0
1 k -14 V 1k CS* < 10 pF
-2 V CS* < 10 pF
< 2 ns < 20 ns
1N914
Scope rise time < 4 ns -4 V
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. Turn