std9n10.pdf part of ST std9n10 std9n10.pdf, . Electronic Components Datasheets Active components Transistors ST std9n10.pdf text manual preview

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STD9N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V DSS R DS(on) ID
STD9N10 100 V < 0.27 9A

s TYPICAL RDS(on) = 0.23
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE 3
s HIGH CURRENT CAPABILITY 2 3
s 175oC OPERATING TEMPERATURE 1 1
s APPLICATION ORIENTED
CHARACTERIZATION
IPAK DPAK
s THROUGH-HOLE IPAK (TO-251) POWER
TO-251 TO-252
PACKAGE IN TUBE (SUFFIX "-1")
(Suffix "-1") (Suffix "T4")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")

APPLICATIONS INTERNAL SCHEMATIC DIAGRAM
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS

s REGULATORS

s DC-DC & DC-AC CONVERTERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 100 V
VDGR Drain- gate Voltage (R GS = 20 k) 100 V
V GS Gate-source Voltage