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CED4279/CEU4279
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES
D1/D2
40V , 14A , RDS(ON) = 32m @VGS = 10V.
RDS(ON) = 46m @VGS = 4.5V.
-40V , -9A , RDS(ON) = 72m @VGS = 10V.
RDS(ON) = 110m @VGS = 4.5V. G1 G2

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability. S1 S2
D1/D2
Lead free product is acquired.
S1
TO-252-4L package. G1
S2
G2

CEU SERIES
TO-252-4L

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 40 40 V
Gate-Source Voltage VGS