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HD1750FX
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH
DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS

STATE-OF-THE-ART TECHNOLOGY: Figure 1: Package
DIFFUSED COLLECTOR "ENHANCED
GENERATION" EHVS1
WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
LESS SENSITIVE TO OPERATING
TEMPERATURE VARIATION
FULLY INSULATED POWER PACKAGE U.L.
COMPLIANT

APPLICATIONS ISOWATT218FX
HORIZONTAL DEFLECTION OUTPUT FOR
DIGITAL TV, HDTV AND HIGH-END
MONITORS
Figure 2: Internal Schematic Diagram
DESCRIPTION
The device is manufactured using Diffused
Collector in Planar technology adopting "Enhance
High Voltage Structure" (EHVS1) developed to fit
High-Definition CRT displays.
The new HD product series show improved silicon
efficiency bringing updated performance to the
Horizontal Deflection stage.




Table 1: Order Codes
Part Number Marking Package Packaging
HD1750FX HD1750FX ISOWATT218FX TUBE




Rev. 2
December 2005 1/8
HD1750FX

Table 2: Absolute Maximum Ratings

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1700 V
VCEO Collector-Emitter Voltage (IB= 0) 800 V
VEBO Emitter-Base Voltage (IC= 0) 10 V
IC Collector Current 24 A
ICM Collector Peak Current (tp < 5ms) 36 A
IB Base Current 12 A
IBM Base Peak Current (tp < 5ms) 18 A
Ptot o 75 W
Total Dissipation at TC = 25 C

Vins Insulation Withstand Voltage (RMS) from All Three Leads to
2500 V
External Heatsink
Tstg Storage Temperature -65 to 150