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AO4427
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AO4427 uses advanced trench technology to VDS (V) = -30V
provide excellent RDS(ON), and ultra-low low gate ID = -12.5 A (VGS = -20V)
charge with a 25V gate rating. This device is suitable RDS(ON) < 12m (VGS = -20V)
for use as a load switch or in PWM applications. The RDS(ON) < 14m (VGS = -10V)
device is ESD protected. Standard Product AO4427 ESD Rating: 2KV HBM
is Pb-free (meets ROHS & Sony 259 specifications).
AO4427L is a Green Product ordering option.
AO4427 and AO4427L are electrically identical
SOIC-8 D
Top View
S D
S D
G
S D
G D
S
Absolute Maximum Ratings TA=25