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UMD3N
NPN-PNP built-in resistors
Elektronische Bauelemente
Multi-Chip Digital Transistor
SOT-363
o
.055(1.40) 8
.047(1.20) 0
o
.026TYP
(0.65TYP)
6 5 4
Features .021REF
(0.525)REF
.096(2.45) .053(1.35)
* DTA114E and DTC114E transistors are .085(2.15) .045(1.15)
built-in a SOT-363 package.
* Transistor elements are independent, .018(0.46)
1 2 3
.010(0.26)
eliminating interference. .014(0.35) .006(0.15)
.006(0.15) .003(0.08)
* Mounting cost and area can be cut in half.
.087(2.20)
.079(2.00) .004(0.10)
(3) (2) (1)
.000(0.00)
R1 R2
DT r1
.043(1.10) .039(1.00)
DT r2 .035(0.90) .035(0.90)
R2 R1
(4) (5) (6)
R1=R2=10K Dimensions in inches and (millimeters)
MARKING:D3
Electrical Characteristics( Tamb=25 C unless otherwise specified)
O
Parameter Symbol Limits Unit
Supply voltage VCC 50 V
Input voltage VIN -10~40 V
IO 50
Output current mA
IC(MAX) 100
Power dissipation Pd 150(TOTAL) mW
Junction temperature Tj 150
Storage temperature Tstg -55~150
Electrical characteristics (Ta=25)
Parameter Symbol Min. Typ Max. Unit Conditions
VI(off) 0.5 VCC=5V ,IO=100A
Input voltage V
VI(on) 3 VO=0.3V ,IO=10mA
Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA
Input current II 0.88 mA VI=5V
Output current IO(off) 0.5