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SEMICONDUCTOR KTC9014S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Excellent hFE Linearity A _
2.93 + 0.20
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). B 1.30+0.20/-0.15
C 1.30 MAX
D
Low Noise :NF=1dB(Typ.) at f=1kHz. 2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
Complementary to KTC9015S.
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
MAXIMUM RATING (Ta=25 ) P 7
N
C
J
CHARACTERISTIC SYMBOL RATING UNIT M
K
Collector-Base Voltage VCBO 60 V
1. EMITTER
Collector-Emitter Voltage VCEO 50 V
2. BASE
Emitter-Base Voltage VEBO 5 V 3. COLLECTOR
Collector Current IC 150 mA
Emitter Current IE -150 mA
SOT-23
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
Marking
h FE Rank Lot No.
Type Name
BD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 50 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE (Note) VCE=5V, IC=1mA 100 - 1000
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1mA, f=100MHz 60 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Noise Figure NF VCE=6V, IC=0.1mA, Rg=10k , f=1kHz - 1.0 10 dB
Note : hFE Classification B:100 300, C:200 600, D:400 1000
2003. 3. 25 Revision No : 1 1/2
KTC9014S
I C - VCE
(LOW VOLTAGE REGION) h FE - I C
240 500
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
6.0 5.0 Ta=25 C 300
200
DC CURRENT GAIN h FE
3.0 Ta =100 C VCE =6V
2.0
Ta =25 C
160
Ta =-25 C
1.0 100
120
50
80 0.5
30
VCE =1V
40 I B =0.2mA
COMMON EMITTER
0
0 10
0 1 2 3 4 5 6 0.1 0.3 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C f T - IE
COLLECTOR-EMITTER SATURATION
0.5 1K
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER
0.3 I C /I B =10 500
VOLTAGE VCE(sat) (V)
300
0.1
100
0.05 Ta =100 C
Ta =25 C
50
0.03
Ta =-25 C 30
COMMON EMITTER
VCE =10V
Ta =25 C
0.01 10
0.1 0.3 1 3 10 30 100 300 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I C (mA) EMITTER CURRENT I E (mA)
I B - VBE Pc - Ta
2K 500
COLLECTOR POWER DISSIPATION
COMMON EMITTER 1 MOUNTED ON 99.5%
1K
VCE =6V
ALUMINA 10x8x0.6mm
BASE CURRENT I B (