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SEMICONDUCTOR KTC9012S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Excellent hFE Linearity. A _
2.93 + 0.20
Complementary to KTC9013S. B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
MAXIMUM RATING (Ta=25 ) K 0.00 ~ 0.10
L 0.55
P P
CHARACTERISTIC SYMBOL RATING UNIT M 0.20 MIN
N 1.00+0.20/-0.10
Collector-Base Voltage VCBO -40 V P 7
N
C
J
Collector-Emitter Voltage VCEO -30 V M
K
Emitter-Base Voltage VEBO -5 V
1. EMITTER
Collector Current IC -500 mA 2. BASE
3. COLLECTOR
Emitter Current IE 500 mA
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150 SOT-23
Storage Temperature Range Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
Marking
h FE Rank Lot No.
Type Name
BB
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
DC Current Gain hFE (Note) VCE=-1V, IC=-50mA 96 - 246
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.25 V
Base-Emitter Voltage VBE IC=-100mA, VCE=-1V -0.8 -1.0 V
Transition Frequency fT VCE=-6V, IC=-20mA, f=100MHz 150 - - MHz
Collector Output Capacitance Cob VCB=-6V, IE=0, f=1MHz - 7.0 - pF
Note : hFE Classification F:96 135, G:118 166, H:144 202, I:176 246
2003. 3. 25 Revision No : 1 1/2
KTC9012S
I C - VCE
(LOW VOLTAGE REGION) h FE - I C
-600 500
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
-8 -7 -6 Ta=25 C 300
-500 -5 Ta =100 C
DC CURRENT GAIN h FE
VCE =-6V
-4
-400 Ta =25 C
-3 100 Ta =-25 C
-300 VCE =-1V
-2 50
-200
IB =-1mA 30
-100
COMMON EMITTER
0
0 10
0 -1 -2 -3 -4 -5 -0.3 -1 -3 -10 -30 -100 -300 -1K
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C I B - VBE
COLLECTOR-EMITTER SATURATION
-0.5 -1k
COMMON EMITTER COMMON
-0.3 I C /I B =10 -300 EMITTER
BASE CURRENT I B (