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SEMICONDUCTOR KTC3551T
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
E
FEATURES K B
DIM MILLIMETERS
Adoption of MBIT Processes. A _
2.9 + 0.2
Large Current Capacitance. B 1.6+0.2/-0.1
C _
0.70 + 0.05
2
Low Collector-to-Emitter Saturation Voltage.
G
3 _
D 0.4 + 0.1
D
A
E 2.8+0.2/-0.3
F
High-Speed Switching. F _
1.9 + 0.2
1
G
Ultrasmall Package Facilitates Miniaturization in end Products. G 0.95
H _
0.16 + 0.05
High Allowable Power Dis sipation. I 0.00-0.10
J 0.25+0.25/-0.15
Complementary to KTA1551T. K 0.60
C
L 0.55
L
MAXIMUM RATING (Ta=25 ) H
I
J J
CHARACTERISTIC SYMBOL RATING UNIT
1. EMITTER
Collector-Base Voltage VCBO 80 V
2. BASE
VCES 80 3. COLLECTOR
Collector-Emitter Voltage V
VCEO 50
Emitter-Base Voltage VEBO 5 V
DC IC 1.0 TSM
Collector Current A
Pulse ICP 3
Base Current IB 200 mA
PC *
Marking
Collector Power Dissipation 0.9 W
Lot No.
Junction Temperature Tj 150
Storage Temperature Range
* Package mounted on a ceramic board (600
Tstg
0.8
-55 150
)
Type Name
HK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 80 - - V
V(BR)CES IC=100 A, VBE=0 80 - - V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=1mA, IB=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V
VCE(sat)1 IC=500mA, IB=10mA - 130 190 mV
Collector-Emitter Saturation Voltage
VCE(sat)2 IC=300mA, IB=6mA - 90 135 mV
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=10mA - 0.81 1.2 V
DC Current Gain hFE VCE=2V, IC=100mA 200 - 560
Transition Frequency fT VCE=10V, IC=300mA - 420 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 6 - pF
PW=20