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SEMICONDUCTOR KRC110S~KRC114S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
With Built-in Bias Resistors. A _
2.93 + 0.20
B 1.30+0.20/-0.15
Simplify Circuit Design.
C 1.30 MAX
D
2
Reduce a Quantity of Parts and Manufacturing Process. 3 D 0.40+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
EQUIVALENT CIRCUIT K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
C N 1.00+0.20/-0.10
N
C
P 7
J
R1 Q 0.1 MAX
K
M
B
1. EMITTER
2. BASE
3. COLLECTOR
E
SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V Collector Power Dissipation PC 200 mW
Collector-Emitter Voltage VCEO 50 V Junction Temperature Tj 150
Emitter-Base Voltage VEBO 5 V Storage Temperature Range Tstg -55 150
Collector Current IC 100 mA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
KRC110S 3.29 4.7 6.11
KRC111S 7 10 13
Input Resistor KRC112S R1 70 100 130 k
KRC113S 15.4 22 28.6
KRC114S 32.9 47 61.1
Note : * Characteristic of Transistor Only.
Marking
Lot No.
MARK SPEC
TYPE KRC110S KRC111S KRC112S KRC113S KRC114S Type Name
MARK NK NM NN NO NP
2008. 10. 29 Revision No : 3 1/4
KRC110S~KRC114S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KRC110S - 0.025 -
KRC111S - 0.03 -
Rise
KRC112S tr - 0.3 -
Time
KRC113S - 0.06 -
KRC114S - 0.11 -
KRC110S - 3.0 -
KRC111S VO=5V - 2.0 -
Switching Storage
KRC112S tstg VIN=5V - 6.0 - S
Time Time
KRC113S RL=1k - 4.0 -
KRC114S - 5.0 -
KRC110S - 0.2 -
KRC111S - 0.12 -
Fall
KRC112S tf - 2.0 -
Time
KRC113S - 0.9 -
KRC114S - 1.4 -
2008. 10. 29 Revision No : 3 2/4
KRC110S~KRC114S
h FE - I C V CE(sat) - I C
KRC110S KRC110S
COLLECTOR-EMITTER SATURATION
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 Ta=100 C 0.5
300 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRC111S KRC111S
COLLECTOR-EMITTER SATURATION
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRC112S KRC112S
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
VOLTAGE VCE(sat) (V)
DC CURRENT GAIN h FE
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2008. 10. 29 Revision No : 3 3/4
KRC110S~KRC114S
h FE - I C VCE(sat) - I C
KRC113S KRC113S
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
VOLTAGE V CE(sat) (V)
DC CURRENT GAIN h FE
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C V CE(sat) - I C
KRC114S KRC114S
COLLECTOR-EMITTER SATURATION
2k 2
I C/I B=20
1k 1
DC CURRENT GAIN h FE
VOLTAGE V CE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C
0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
Ta=-25 C
V CE =5V
0.01
10
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT IC (mA)
2008. 10. 29 Revision No : 3 4/4