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SEMICONDUCTOR KTC3708U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
High frequency amplifier transistor, RF switching application.
E
FEATURES M B M
Very low on resistance (RON). DIM MILLIMETERS
A _
2.00 + 0.20
D
Low capacitance. 2 B _
1.25 + 0.15
_
A
C 0.90 + 0.10
J
1 3
G
D 0.3+0.10/-0.05
E _
2.10 + 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
MAXIMUM RATING (Ta=25 ) K 0.00-0.10
L 0.70
CHARACTERISTIC SYMBOL RATING UNIT
C
H _
L
M 0.42 + 0.10
N 0.10 MIN
Collector-Base Voltage VCBO 12 V N
K
N
Collector-Emitter Voltage VCEO 6 V
VEBO 1. EMITTER
Emitter-Base Voltage 3 V
2. BASE
Collector Current IC 50 mA 3. COLLECTOR
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 USM
Marking
Lot No.
Type Name
EA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=10V, IE=0 - - 0.5 A
Emitter Cut-off Current IEBO VEB=2V, IC=0 - - 0.5 A
DC Current Gain hFE VCE=5V, IC=5mA 270 - 560
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.3 V
Transition Frequency fT VCE=5V, IE=-10mA, f=200MHz 300 800 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0A, f=1MHz - 1 1.7 pF
On Resistance Ron IB=3mA, VI=100mVrms, f=500kHz - 2 -
2008. 8. 29 Revision No : 1 1/3
KTC3708U
IC -VCE IC -VCE
10 50
Ta=25