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SEMICONDUCTOR KRC830U~KRC834U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
FEATURES B1
With Built-in Bias Resistors.
1 6 DIM MILLIMETERS
Simplify Circuit Design. A _
2.00 + 0.20
C
_
A1
2 5 A1 1.3 + 0.1
A
Reduce a Quantity of Parts and Manufacturing Process. B _
2.1 + 0.1
C
3 4 D B1 _
1.25 + 0.1
High Packing Density.
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) H _
0.9 + 0.1
H
T T 0.15+0.1/-0.05
C 6 5 4
G
R1
B 1. Q1 EMITTER
Q1 Q2 2. Q2 EMITTER
3. Q2 BASE
4. Q2 COLLECTOR
5. Q1 BASE
6. Q1 COLLECTOR
E 1 2 3
US6
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V Collector Power Dissipation PC * 200 mW
Collector-Emitter Voltage VCEO 50 V Junction Temperature Tj 150
Emitter-Base Voltage VEBO 5 V Storage Temperature Range Tstg -55 150
Collector Current IC 100 mA * Total Raing.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
KRC830U - 4.7 -
KRC831U - 10 -
Input Resistor KRC832U R1 - 100 - k
KRC833U - 22 -
KRC834U - 47 -
Note : * Characteristic of Transistor Only. Marking 6 5 4
Lot No.
MARK SPEC Type Name
TYPE KRC830U KRC831U KRC832U KRC833U KRC834U
MARK YK YM YN YO YP
1 2 3
2008. 9. 23 Revision No : 3 1/4
KRC830U~KRC834U
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KRC830U - 0.025 -
KRC831U - 0.03 -
Rise Time KRC832U tr - 0.3 -
KRC833U - 0.06 -
KRC834U - 0.11 -
KRC830U - 3.0 -
KRC831U VO=5V - 2.0 -
Switching
Storage Time KRC832U tstg VIN=5V - 6.0 - S
Time
KRC833U RL=1k - 4.0 -
KRC834U - 5.0 -
KRC830U - 0.2 -
KRC831U - 0.12 -
Fall Time KRC832U tf - 2.0 -
KRC833U - 0.9 -
KRC834U - 1.4 -
2008. 9. 23 Revision No : 3 2/4
KRC830U~KRC834U
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC830U KRC830U
2k 2
IC /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 Ta=100 C 0.5
300 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC831U KRC831U
2k 2
IC /I B =20
1k
DC CURRENT GAIN hFE
1
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC832U KRC832U
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
2008. 9. 23 Revision No : 3 3/4
KRC830U~KRC834U
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC833U KRC833U
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
hFE - IC VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
KRC834U KRC834U
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN hFE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C
0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
Ta=-25 C
VCE =5V
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
2008. 9. 23 Revision No : 3 4/4