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TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/277

Devices Qualified Level

2N2150 2N2151 JANTX

MAXIMUM RATINGS (TC = 250C unless otherwise noted)
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCBO 150 Vdc
Emitter-Base Voltage VEBO 8.0 Vdc
Base Current IB 2.0 Adc
Collector Current IC 2.0 Adc
Total Power Dissipation @ Tc = +1000C(1) PT 30 W
Operating & Storage Junction Temperature Range 0
TJ, Tstg -65 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit TO-111*
0
Thermal Resistance, Junction-to-Case RJC 3.3 C/W
1) Derate linearly @ 0.3 W/0C for TC > +1000C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = +250C)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO 100 Vdc
IC = 50 mAdc
Collector-Emitter Breakdown Voltage
VCBO 150 Vdc
IC = 100