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STS8C5H30L
N-channel 30 V, 0.018 8 A, P-channel 30 V, 0.045 5 A SO-8
, ,
low gate charge STripFETTM III MOSFET

Features
RDS(on)
Type VDSS ID
max
STS8C5H30L(N-channel) 30 V < 0.022 8A
STS8C5H30L(P-channel) 30 V < 0.055 5A

Conduction losses reduced
Switching losses reduced
SO-8
Low threshold drive
Standard outline for easy automated surface
mount assembly

Application Figure 1. Internal schematic diagram
Switching applications

Description
The STS8C5H30L is a Power MOSFET realized
with the latest development of STMicroelectronics
unique "single feature size" strip-based process.
The resulting transistor shows extremely high
packing density for low on-resistance, rugged
avalanche characteristics and less critical
alignment steps therefore a remarkable
manufacturing reproducibility.

Table 1. Device summary
Part number Marking Package Packaging

STS8C5H30L S8C5H30L SO-8 Tape and reel

Note: For the p-channel MOSFET actual polarity of voltages and current has to be reversed

June 2010 Doc ID 10809 Rev 6 1/14
www.st.com 14
Contents STS8C5H30L

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14 Doc ID 10809 Rev 6
STS8C5H30L Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
N-channel P-channel

VDS Drain-source voltage (vgs = 0) 30 V
VGS Gate- source voltage