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BLF574
HF / VHF power LDMOS transistor
Rev. 02 -- 24 February 2009 Product data sheet
1. Product profile
1.1 General description
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial
applications in the HF to 500 MHz band.
Table 1. Application information
Mode of operation f VDS PL Gp D
(MHz) (V) (W) (dB) (%)
CW 225 50 500 26.5 70
108 50 600 27.5 73
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq
of 1000 mA:
N Average output power = 500 W
N Power gain = 26.5 dB
N Efficiency = 70 %
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (10 MHz to 500 MHz)
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I Industrial, scientific and medical applications
I Broadcast transmitter applications
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain1
1 2 1
2 drain2
5
3 gate1
3
4 gate2 3 4 5
4
5 source [1]
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF574 - flanged balanced LDMOST ceramic package; SOT539A
2 mounting holes; 4 leads
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage -0.5 +11 V
ID drain current - 56 A
Tstg storage temperature -65 +150