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BFW43
HIGH VOLTAGE AMPLIFIER
DESCRIPTION
The BFW43 is a silicon planar epitaxial PNP
transistors in Jedec TO-18 metal case. It is
designed for use in amplifiers where high voltage
and high gain are necessary. In particular, its
feature a VCEO of 150V are specified over a wide
range of curent.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (IE = 0) -150 V
V CEO Collector-Emitter Voltage (I B = 0) -150 V
V EBO Emitter-Base Voltage (I C = 0) -6 V
IC Collector Current -0.1 A
o
P t ot Total Dissipation at T amb 25 C 0.4 W
at T case 25 o C 1.4 W
o
T stg St orage Temperature -55 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
November 1997 1/5
BFW43
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 125 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 438 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CE = -100 V -0.2 -10 nA
Current (IE = 0) V CE = -100 V T a mb = 125 o C -0.03 -10