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SEMICONDUCTOR KMB050N60P
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast A
O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for active power factor
E G DIM MILLIMETERS
correction , electronic lamp ballasts based on half bridge topology and A _
9.9 + 0.2
B B 15.95 MAX
switching mode power supplies. Q C 1.3+0.1/-0.05
D _
0.8 + 0.1
I
E _
3.6 + 0.2
F _
2.8 + 0.1
K P G 3.7
FEATURES M H 0.5+0.1/-0.05
L
1.5
VDSS= 60V, ID= 50A J
I
_
J 13.08 + 0.3
Drain-Source ON Resistance : D K 1.46
L _
1.4 + 0.1
H
RDS(ON)=0.022 @VGS = 10V N N
M _
1.27+ 0.1
N _
2.54 + 0.2
Qg(typ.) = 32nC O _
4.5 + 0.2
Improved dv/dt capacity, high Ruggedness P _
2.4 + 0.2
Q _
9.2 + 0.2
Maximum Junction Temperature Range (175 ) 1 2 3 1. GATE
2. DRAIN
3. SOURCE
TO-220AB
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V D
@TC=25 50
ID
Drain Current @TC=100 35 A
Pulsed (Note1) IDP 200 G
Single Pulsed Avalanche Energy EAS 493 mJ
(Note 2)
Repetitive Avalanche Energy EAR 12 mJ S
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 7.0 V/ns
(Note 3)
Drain Power Tc=25 120 W
PD
Dissipation Derate above 25 0.8 W/
Maximum Junction Temperature Tj 175
Storage Temperature Range Tstg -55 175
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 1.24 /W
Thermal Resistance, Case-to-Sink RthCS 0.5 /W
Thermal Resistance, Junction-to-
RthJA 62.5 /W
Ambient
2006. 4. 24 Revision No : 1 1/6
KMB050N60P
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 60 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.07 - V/
Drain Cut-off Current IDSS VDS=60V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=25A - 0.018 0.022
Dynamic
Total Gate Charge Qg - 32 42
VDS= 48V, ID= 50A
Gate-Source Charge Qgs - 8 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 12 -
Turn-on Delay time td(on) - 20 50
VDD= 30V
Turn-on Rise time tr - 100 210
ID=25A ns
Turn-off Delay time td(off) - 80 170
RG= 25 (Note4,5)
Turn-off Fall time tf - 85 180
Input Capacitance Ciss - 1050 1365
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz - 70 90 pF
Output Capacitance Coss - 460 600
Source-Drain Diode Ratings
Continuous Source Current IS - - 50
VGS Pulsed Source Current ISP - - 200
Diode Forward Voltage VSD IS=50A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=50A, VGS=0V, - 50 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 70 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=230 H, IS=50A, VDD=25V, RG=25 , Starting Tj=25 .
Note 3) IS 50A, dI/dt 300A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
2006. 4. 24 Revision No : 1 2/6
KMB050N60P
ID - VDS ID - VGS
VGS VDS = 30V
102 TOP : 15.0 V
250