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PT8205A
20V Dual N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m
RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
Ideal for Li ion battery pack applications
1 8
D1 D2
2 7
S1 S2
3 6
S1 S2
4 5
G1 G2
TSSOP-8 Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 1.20 MAX. E1 4.30 4.50
. A1 0.05 0.15 e 0.65BSC
A2 0.80 1.05 L 0.45 0.75
b 0.19 0.30 0