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MMDT4403
PNP Silicon
Elektronische Bauelemente
Multi-Chip Transistor
RoHS Compliant Product
SOT-363

* Features .055(1.40) 8
o

.047(1.20) 0
o
.026TYP
(0.65TYP)
.021REF
Power dissipation. (0.525)REF

PCM : 0.2 W (Temp.=25 C)
O
.096(2.45) .053(1.35)
.085(2.15) .045(1.15)

Collector current
.018(0.46)
ICM : - 0.6 A .014(0.35)
.010(0.26)
.006(0.15)
C2 B1 E1 .006(0.15) .003(0.08)
Collector -base voltage .087(2.20)
.079(2.00) .004(0.10)
V(BR) CBO : - 40 V .000(0.00)

.043(1.10) .039(1.00)
Operating & storage junction temperature E2 B2 C1
.035(0.90) .035(0.90)

Tj, Tstg : -55 C ~ +150 C
O O

Marking : K2T
Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=-100