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STB80PF55
P-CHANNEL 55V - 0.016 - 80A D2PAK
STripFETTM II POWER MOSFET
PRELIMINARY DATA

TYPE VDSS RDS(on) ID

STB80PF55 55 V < 0.018 80 A
s TYPICAL RDS(on) = 0.016
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION 3
1

DESCRIPTION D2PAK
TO-263
This Power MOSFET is the latest development of (Suffix "T4")
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS
s MOTOR CONTROL

s DC-DC & DC-AC CONVERTERS

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 55 V
VDGR Drain-gate Voltage (RGS = 20 k) 55 V
VGS Gate- source Voltage