Text preview for : 2sa1577.pdf part of LGE 2sa1577 . Electronic Components Datasheets Active components Transistors LGE 2sa1577.pdf



Back to : 2sa1577.pdf | Home

2SA1577
SOT-323 Transistor(PNP)

1. BASE SOT-323
2. EMITTER
3. COLLECTOR


Features
Large IC. CMax.=-500mA
Low VCE(sat).Ideal for low-voltage operation.
Complements the 2SC4097.


MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters)

VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-20V,IE=0 -1 A
Emitter cut-off current IEBO VEB=-4V,IC=0 -1 A
DC current gain hFE VCE=-3V,IC=-10mA 82 390
Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB=-10mA -0.4 V
Transition frequency fT VCE=-5V, IC=-20mA ,f =100MHz 200 MHz

Collector Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF


CLASSIFICATION OF hFE
Rank P Q R

Range 82-180 120-270 180-390

MARKING HP HQ HR
2SA1577
SOT-323 Transistor(PNP)