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SEMICONDUCTOR KTD1413
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH POWER SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
A C
APPLICATIONS.
DIM MILLIMETERS
F
S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
FEATURES E
C _
2.70 + 0.3
B
High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A. D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
MAXIMUM RATING (Ta=25 ) D D N _
2.54 + 0.1
P _
6.8 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT Q _
4.5 + 0.2
R _
2.6 + 0.2
Collector-Base Voltage VCBO 150 V N N H S 0.5 Typ
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEB0 7 V 1. BASE
Q
1 2 3
2. COLLECTOR
Collector Current IC 5 A
3. EMITTER
Base Current IB 0.5 A
Collector Power Dissipation (Tc=25 ) PC 25 W TO-220IS
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
COLLECTOR
BASE
~ ~
= 3K = 300
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 1 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 100 - - V
hFE(1) VCE=2V, IC=3A 2000 6000 15000
DC Current Gain
hFE(2) VCE=2V, IC=5A 500 - -
Saturation Collector-Emitter VCE(sat) IC=3A, IB=3mA - 0.9 1.5
V
Voltage Base-Emitter VBE(sat) IC=3A, IB=3mA - 1.6 2.0
Turn-on Time ton OUTPUT - 1.0 -
20