cem2939.pdf part of CET cem2939 cem2939.pdf, . Electronic Components Datasheets Active components Transistors CET cem2939.pdf text manual preview

Text preview for : cem2939.pdf part of CET cem2939 . Electronic Components Datasheets Active components Transistors CET cem2939.pdf

Back to : cem2939.pdf | Home

CEM2939
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES
5
20V, 6.5A, RDS(ON) = 30m @VGS = 4.5V.
RDS(ON) = 43m @VGS = 2.5V.
-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V.
RDS(ON) = 90m @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
D1 D1 D2 D2
High power and current handing capability. 8 7 6 5

Lead free product is acquired.
Surface mount Package.

SO-8
1 2 3 4
1 S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS