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2SK3126
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)

2SK3126
Switching Regulator Applications
Unit: mm

Low drain-source ON resistance : RDS (ON) = 0.48 (typ.)
High forward transfer admittance : |Yfs| = 7.5 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 450 V)
Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25