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SEMICONDUCTOR MPSA56
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
AUDIO FREQUENCY AMPLIFIER APPLICATIONS.
B C
FEATURES
Complementary to MPSA06.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
MAXIMUM RATING (Ta=25 )
J
D 0.45
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
G 0.85
Collector-Base Voltage VCBO -80 V H 0.45
H J _
14.00 + 0.50
VCEO K 0.55 MAX
Collector-Emitter Voltage -80 V F F
L 2.30
M 0.45 MAX
Emitter-Base Voltage VEBO -5 V N 1.00
C
1 2 3
L
Collector Current IC -500 mA
M
1. EMITTER
Emitter Current IE 500 mA 2. BASE
3. COLLECTOR
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
TO-92
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -100 nA
Emitter Cut-off Current ICEO VCE=-60V, IB=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -80 - - V
hFE(1) VCE=-1V, IC=-10mA 100 - -
DC Current Gain
hFE(2) VCE=-1V, IC=-100mA 100 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - - -0.25 V
Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - - -1.2 V
Transition Frequency fT VCE=-1V, IE=0, IC=-100mA 50 - - MHz
1999. 11. 30 Revision No : 3 1/1