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BUK9Y14-40B
N-channel TrenchMOS logic level FET
Rev. 03 -- 2 June 2008 Product data sheet

1. Product profile

1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.

1.2 Features and benefits
Low conduction losses due to low Q101 compliant
on-state resistance
Suitable for logic level gate drive Suitable for thermally demanding
sources environments due to 175