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SEMICONDUCTOR KTB1151
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE
A
LARGE CURRENT B D
C
E
FEATURES
High Power Dissipation : PC=1.5W(Ta=25 ) F
Complementary to KTD1691. G
H
DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
MAXIMUM RATING (Ta=25 ) C 0.7
D _
3.2 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT E 3.5
F _
11.0 + 0.3
Collector-Base Voltage VCBO -60 V G 2.9 MAX
M
H 1.0 MAX
Collector-Emitter Voltage VCEO -60 V J 1.9 MAX
O K _
0.75 + 0.15
N P
_
Emitter-Base Voltage VEBO -7 V 1 2 3 L 15.50 + 0.5
M _
2.3 + 0.1
_
0.65 + 0.15
DC IC -5 N
O 1.6
Collector Current A 1. EMITTER
P 3.4 MAX
Pulse * ICP -8 2. COLLECTOR
3. BASE
Base Current IB -1 A
Collector Power Ta=25 1.5 TO-126
PC W
Dissipation Tc=25 20
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* PW 10ms, Duty Cycle 50%
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -10 A
Emitter Cut-off Current IEBO VEB=-7V, IC=0 - - -10 A
hFE 1 VCE=-1V, IC=-0.1A 60 - -
DC Current Gain * hFE2 (Note) VCE=-1V, IC=-2A 160 - 400
hFE 3 VCE=-2V, IC=-5A 50 - -
Collector-Emitter Saturation Voltage * VCE(sat) IC=-2A, IB=-0.2A - -0.14 -0.3 V
Base-Emitter Saturation Voltage * VBE(sat) IC=-2A, IB=-0.2A - -0.9 -1.2 V
OUTPUT
Turn On Time ton - 0.15 1
I B2 I B1
0
INPUT
Switching IB1
5
Storage Time tstg I B2
- 0.78 2.5 S
Time
20