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PBSS304PD
80 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 02 -- 24 March 2009 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS304ND.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -80 V
IC collector current [1] - - -3 A
ICM peak collector current single pulse; - - -5 A
tp 1 ms
RCEsat collector-emitter IC = -2 A; [2] - 75 100 m
saturation resistance IB = -200 mA
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp 300