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2SB1424
Epitaxial Planar PNP Transistors SOT-89
P b Lead(Pb)-Free
1
2
1. BASE 3
2. COLLECTOR
3. EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25% )
C
Rating Symbol Limits Unit
Collector-Base Voltage VCBO -20 Vdc
Collector-Emitter Voltage VCEO -20 Vdc
Emitter-Base Voltage VEBO -6 Vdc
IC -3 A(DC)
Collector Current
I CP -5 A (Pulse)*
Collector Power Dissipation PD 0.6 W
Junction Temperature, Storage Temperature Tj , Tstg 150, -55 to +150 %
C
* Single pulse Pw = 10ms
ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted )
C
Parameter Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage( Ic=-50mA ) BV CBO -20 - - V
Collector-Emitter Breakdown Voltage( Ic=-1mA ) BV CEO -20 - - V
Emitter-Base Breakdown Voltage ( IE =-50mA ) BVEBO -6 - - V
Collector Cutoff Current( VCB =-20V ) ICBO - - -0.1 mA
Emitter Cutoff Current( VEB=-5V ) IEBO - - -0.1 mA
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2SB1424
ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) (Countinued)
C
Parameter Symbol Min Typ Max Unit Conditions
DC Current Transfer Ratio VCE(sat) - - -0.5 V Ic / IB =-2A / -0.1A
Collector-Emitter Saturation Voltage h FE 120 - 390 - Vc E =-2V, Ic = -0.1A
Transition Frequency fT - 240 - MHz Vc E =-2V, I E = 0.5A, f=100MHz
Output Capacitance Cob - 35 - pF VCB=-10V, I E =0A, f=1MHz
CLASSIFICATION OF hFE
Marking AEQ AER
Rank Q R
Range 120-270 180-390
ELECTRICAL CHARACTERISTIC CURVES
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2SB1424
ELECTRICAL CHARACTERISTIC CURVES
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2SB1424
SOT-89 Outline Dimensions unit:mm
SOT-89
E Dim Min Max
G A A 1.400 1.600
B 0.320 0.520
C 0.360 0.560
H D 0.350 0.440
J C E 4.400 4.600
G 1.400 1.800
H 2.300 2.600
B D J 3.940 4.250
K
K 1.500TYP
L
L 2.900 3.100
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