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BSP30/31
BSP32/33

MEDIUM POWER AMPLIFIER
ADVANCE DATA
s SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s GENERAL PURPOSE MAINLY INTENDED
2
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE 3
2
s NPN COMPLEMENTS ARE BSP40, BSP41, 1
BSP42 AND BSP43 RESPECTIVELY
SOT-223

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BSP30/BSP31 BSP32/BSP33
V CBO Collector-Base Voltage (I E = 0) -70 -90 V
V CEO Collector-Emitter Voltage (I B = 0) -60 -80 V
V CES Collector-Emitter Voltage (R BE = 1K) -70 -90 V
V EBO Emitter-Base Voltage (I C = 0) -5 V
IC Collector Current -1 A
IB Base Current -0.1 A
P tot Total Dissipation at T c = 25 o C 2 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C

October 1995 1/4
BSP30/31/32/33

THERMAL DATA
R thj-amb