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MMBTA42
SOT-23 Transistor(NPN)

1. BASE
SOT-23
2. EMITTER
3. COLLECTOR

Features
High breakdown voltage
Low collector-emitter saturation voltage
Complementary to MMBTA92(PNP)

MARKING:1D
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage 300 V
VCEO Collector-Emitter Voltage 300 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.3 A
PC Collector Power Dissipation 0.35 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 300 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 300 V

Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V

Collector cut-off current ICBO VCB=200V,IE=0 0.25 A

Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A

hFE(1) VCE=10V,IC=1mA 60

DC current gain hFE(2) VCE=10V,IC=10mA 100 200

hFE(3) VCE=10V,IC=30mA 60

Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V

Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V

Transition frequency fT VCE=20V,IC=10mA,f=30MHz 50 MHz
MMBTA42
SOT-23 Transistor(NPN)
MMBTA42
SOT-23 Transistor(NPN)