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BLF578
Power LDMOS transistor
Rev. 02 -- 4 February 2010 Product data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 500 MHz band.
Table 1. Application information
Mode of operation f VDS PL Gp D
(MHz) (V) (W) (dB) (%)
CW 108 50 1000 26 75
pulsed RF 225 50 1200 24 71
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 s with of 20 %:
Output power = 1200 W
Power gain = 24 dB
Efficiency = 71 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
NXP Semiconductors BLF578
Power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain1
1 2 1
2 drain2
5
3 gate1
3
4 gate2 3 4 5
4
5 source [1]
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BLF578 - flanged balanced LDMOST ceramic package; SOT539A
2 mounting holes; 4 leads
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage -0.5 +11 V
ID drain current - 88 A
Tstg storage temperature -65 +150