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TECHNICAL DATA

NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374

Devices Qualified Level
JAN
2N3996 2N3997 2N3998 2N3999 JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 8.0 Vdc
Base Current IB 0.5 Adc
5.0
Collector Current IC Adc
10(1)
0 (2)
Total Power Dissipation @ TA = +25 C 2.0
PT W
@ TC = +1000C (3) 30
0
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C
THERMAL CHARACTERISTICS TO-111*
Characteristics Symbol Max. Unit
0
Thermal Resistance, Junction-to-Case RJC 3.33 C/W
1) This value applies for tp 1.0 ms, duty cycle 50%
2) Derate linearly 11.4 mW/0C for TA > +250C
3) Derate linearly 300 mW/0C for TC > +1000C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO 80 Vdc
IC = 50 mAdc
Collector-Emitter Breakdown Voltage
V(BR)CBO 100 Vdc
IC = 10