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WTC2312
N-Channel Enhancement 3 DRAIN
DRAIN CURRENT
Mode Power MOSFET
4.9 AMPERES
P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE
20 VOLTAGE
1 GATE
Features:
* Super High Dense Cell Design For Low RDS(ON)
RDS(ON)<41m @VGS=4.5V 2 SOURCE
3
RDS(ON)<47m @VGS=2.5V
RDS(ON)<57m @VGS=1.8V 1
* Capable of 2.5V gate drive 2
* Rugged and Reliable
* Lower On-Resistance
SOT-23
Application:
* Power Management in Notebook Computer.
* Portable Equipment.
* Battery Powered System.

Maximum Ratings(TA=25 Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage V DS 20
V
Gate-Source Voltage VG S