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SEMICONDUCTOR KMA2D4P20SA
TECHNICAL DATA P-Ch Trench MOSFET
General Description
It's mainly suitable for use as a load switch in battery powered applications.
E
FEATURES B
VDSS=-20V, ID=-2.4A. DIM MILLIMETERS
A _
2.926 + 0.05
Drain-Source ON Resistance. B _
1.626 + 0.05
C 1.25 MAX
: RDS(ON)=100m (Max.) @ VGS=-4.5V.
D
2 3 _
D 0.40 + 0.05
A
G
: RDS(ON)=175m (Max.) @ VGS=-2.5V. E _
2.80 + 0.15
H
1 G _
1.90 + 0.10
H _
0.95 + 0.05
J _
0.15 + 0.05
K 0.00 ~ 0.10
M _
0.45 + 0.08
N _
1.10 + 0.05
N
C
J
M
K
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS -20 V SOT-23
Gate-Source Voltage VGSS 12 V
DC@Ta=25 ID * -2.4
Drain Current A
Pulsed IDP* -9
Source-Drain Diode Current IS * -0.9 A Marking
Lot No.
Ta=25 1.25
Drain Power Dissipation PD * W
Type Name
Ta=100 0.6
KB2
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA * 100 /W
* : Surface Mounted on 1 1 FR4 Board, t 5sec.
PIN CONNECTION (TOP VIEW)
D 3
3
2 1 2 1
G S
2008. 6. 10 Revision No : 0 1/5
KMA2D4P20SA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250 A -20 - - V
VGS=0V, VDS=-20V - - -1
Drain Cut-off Current IDSS A
VGS=0V, VDS=-16V, Tj=70 - - -5
Gate Leakage Current IGSS VGS= 12V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth* VDS=VGS, ID=-250 A -0.6 - - V
VGS=-4.5V, ID=-2.4A - 83 100
Drain-Source ON Resistance RDS(ON)* m
VGS=-2.5V, ID=-1.8A - 145 175
ON State Drain Current ID(ON) VGS=-4.5V, VDS=-5V -9 - - A
Forward Transconductance gfs* VDS=-5V, ID=-2.4A - 4 - S
Dynamic
Input Capacitance Ciss - 292 -
VDS=-15V, f=1MHz
Output Capacitance Coss - 60 - pF
VGS=0V
Reverse Transfer Capacitance Crss - 33 -
Total Gate Charge Qg* - 4 -
VDS=-15V, RD=5.6
Gate-Source Charge Qgs* - 0.6 - nC
VGS=-4.5V
Gate-Drain Charge Qgd* - 1.4 -
Turn-on Delay time td(on)* - 6.5 -
Turn-on Rise time tr* VDD=-15V, VGS=-4.5V , - 13 -
ns
Turn-off Delay time td(off)* ID=-2.4A, RG=6 - 15 -
Turn-off Fall time tf* - 20 -
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF* VGS=0V, IS=-2.4A - - -1.3 V
Note>* Pulse Test : Pulse width <300 , Duty cycle < 2%
2008. 6. 10 Revision No : 0 2/5
KMA2D4P20SA
Fig1. ID - VDS Fig2. RDS(ON) - ID
Drain Source On Resistance RDS(ON) (m)
-10 300
Ta=25 C
-4V -3.5V -3V
-8 250
Drain Current ID (A)
-4.5V -2.5V
200
-6
VGS = -2.5V
150
-4
-2V 100
VGS = -4.5V
-2
50
VGS = -1.5V
0 0
0 -1 -2 -3 0 -2 -4 -6 -8
Drain - Source Voltage VDS (V) Drain Current ID (A)
Fig3. ID - VGS Fig4. RDS(ON) - Tj
Drain-Source On-Resistance RDS(ON) (m)
-10 200
VGS = -4.5V
VDS = VGS ID = -2.4
160
Drain Current ID (A)
-8
Tj=25 C
-6 120
Tj= -55 C
Tj=125 C
-4 80
-2 40
0 0
0 -1 -2 -3 -4 -5 -75 -50 -25 0 25 50 75 100 125 150
Gate - Source Voltage VGS (V) Junction Temperture Tj ( C )
Fig5. Vth - Tj Fig6. IS - VSDF
-2.0 10
VGS = VDS
Reverse Drain Current IS (A)
Threshold Voltage Vth (V)
ID = -250