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DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ67W
NPN 8 GHz wideband transistor
Product specification September 1995
NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

FEATURES PINNING
High power gain PIN DESCRIPTION
Low noise figure Code: V2
High transition frequency 1 base handbook, 2 columns 3
Gold metallization ensures 2 emitter
excellent reliability
3 collector
SOT323 envelope.
1 2
DESCRIPTION Top view MBC870

NPN transistor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV Fig.1 SOT323.
tuners and RF portable
communications equipment up to
2 GHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
IC DC collector current 50 mA
Ptot total power dissipation up to Ts = 118 C; note 1 300 mW
hFE DC current gain IC = 15 mA; VCE = 5 V; Tj = 25 C 60 100
fT transition frequency IC = 15 mA; VCE = 8 V; f = 2 GHz; 8 GHz
Tamb = 25 C
GUM maximum unilateral power gain Ic = 15 mA; VCE = 8 V; f = 1 GHz; 13 dB
Tamb = 25 C
F noise figure Ic = 5 mA; VCE = 8 V; f = 1 GHz 1.3 dB

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
VEBO emitter-base voltage open collector 2.5 V
IC DC collector current 50 mA
Ptot total power dissipation up to Ts = 118 C; note 1 300 mW
Tstg storage temperature 65 150 C
Tj junction temperature 175 C

Note
1. Ts is the temperature at the soldering point of the collector tab.

September 1995 2
NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to up to Ts = 118 C; note 1 190 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS
Tj = 25 C, unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 5 V 50 nA
hFE DC current gain IC = 15 mA; VCE = 5 V 60 100
Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz 0.7 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 1.3 pF
Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz 0.5 pF
fT transition frequency IC = 15 mA; VCE = 8 V; f = 2 GHz; 8 GHz
Tamb = 25 C
GUM maximum unilateral power gain IC = 15 mA; VCE = 8 V; f = 1 GHz 13 dB
(note 1) Tamb = 25 C
IC = 15 mA; VCE = 8 V; f = 2 GHz; 8 dB
Tamb = 25 C
F noise figure s = opt; IC = 5 mA; VCE = 8 V; 1.3 dB
f = 1 GHz
s = opt; IC = 15 mA; VCE = 8 V; 2 dB
f = 1 GHz
s = opt; IC = 5 mA; VCE = 8 V; 2.2 dB
f = 2 GHz
IC = 5 mA; VCE = 8 V; 2.5 dB
f = 2 GHz; Zs = 60
s = opt; IC = 15 mA; VCE = 8 V; 2.7 dB
f = 2 GHz
IC = 5 mA; VCE = 8 V; 3 dB
f = 2 GHz; Zs = 60

Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log --------------------------------------------------------- dB.
2 2
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1