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2SJ669
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)

2SJ669
Relay Drive, DC/DC Converter and Motor Drive
Applications Unit: mm

4-V gate drive
Low drain-source ON-resistance: RDS (ON) = 0.12 (typ.)
High forward transfer admittance: |Yfs| = 5.0 S (typ.)
Low leakage current: IDSS = -100 A (max) (VDS = -60 V)
Enhancement mode: Vth = -0.8 to -2.0 V
(VDS = -10 V, ID = -1 mA)

Absolute Maximum Ratings (Ta = 25