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ST13007
High voltage fast-switching NPN power transistor
Features
DC current gain classification
TAB
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Applications 3
2
1
Electronic ballast for fluorescent lighting
Switch mode power supplies TO-220
Description
Figure 1. Internal schematic diagram
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Table 1. Device summary
Order code Marking (1) Package Packaging
ST13007A
ST13007 TO-220 Tube
ST13007B
1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics
reserves the right to ship from any group according to production availability.
December 2009 Doc ID 5263 Rev 4 1/11
www.st.com 11
Electrical ratings ST13007
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 9 V
IC Collector current 8 A
ICM Collector peak current (tP < 5 ms) 16 A
IB Base current 4 A
IBM Base peak current (tP < 5 ms) 8 A
PTOT Total dissipation at Tc = 25