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SMG2390N
N-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente 1.1 A, 150 V, RDS(ON) 0.700

RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density
SC-59
trench process to provide Low RDS(on) and to ensure minimal power A
loss and heat dissipation. Typical applications are DC-DC converters L
3
and power management in portable and battery-powered products 3

such as computers, printers, PCMCIA cards, cellular and cordless Top View C B
1
telephones. 1 2

K E 2

FEATURES D
Low RDS(on) provides higher efficiency and extends battery life.
F G H J
Low thermal impedance copper leadframe SC-59 saves
board space.
Fast switching speed.
High performance trench technology.
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
PRODUCT SUMMARY A
B
2.70
2.25
3.10
3.00
G
H
0.10 REF.
0.40 REF.
C 1.30 1.70 J 0.10 0.20
PRODUCT SUMMARY D 1.00 1.40 K 0.45 0.55

VDS(V) RDS(on) ( ID(A) E 1.70 2.30 L 0.85 1.15
F 0.35 0.50
0.700@VGS= 10V 1.1
150
1.200@VGS= 5.5V 0.8

ABSOLUTE MAXIMUM RATINGS(TA=25