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WTC2305
P-Channel Enhancement DRAIN CURRENT
Mode Power MOSFET 3 DRAIN
-4.2 AMPERES

DRAIN SOURCE VOLTAGE
1 -30 VOLTAGE

GATE

2
Features: SOURCE
3
*Super High Dense Cell Design For Low R DS(ON)
R DS(ON) <70m @V GS =10V 1
*Rugged and Reliable 2
*Simple Drive Requirement
*SOT-23 Package
SOT-23
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System

Maximum Ratings(TA=25 Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS