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2SK2602
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)

2SK2602
Switching Regulator Applications
Unit: mm

Low drain-source ON resistance : RDS (ON) = 0.9 (typ.)
High forward transfer admittance : |Yfs| = 5.5 S (typ.)
Low leakage current : IDSS = 100