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MBT3904DW
Dual General Purpose Transistor 3 2 1
6 5
4
NPN+NPN Silicon
1
2
3
4 5 6 SOT-363(SC-88)
NPN+NPN
Maximum Ratings
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current-Continuous IC 200 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation TA=25 C PD 150 mW
Thermal Resistance, Junction to Ambient R JA 833 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
MBT3904DW=MA
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Max Unit
Off C har acter istics
Collector-Emitter Breakdown Voltage(2) (IC=1.0mAdc.IB=0) V(BR)CEO 40 - Vdc
Collector-Base Breakdown Voltage (IC=10 uAdc, IE=0) V(BR)CBO 60 - Vdc
Emitter-Base Breakdown Voltage (IE=10 uAdc, IC=0) V(BR)EBO 6.0 - Vdc
Base Cutoff Current (VCE=30 Vdc, VEB =3.0 Vdc) IBL - 50 nAdc
Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc) ICEX - 50 nAdc
1. Device Mounted FR4 glass epoxy printed circuit board using the minimun recommended footprint.
2. Pulse Test:Pulse Width<300uS, Duty Cycle<2.0%
= =
WEITRON
http://www.weitron.com.tw
MBT3904DW
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
On Characteristics (2)
DC Current Gain
(IC= 0.1 mAdc, VCE=1.0Vdc) 40 -
(IC= 1.0 mAdc, VCE= 1.0 Vdc) 70 -
-
(IC= 10 mAdc, VCE= 1.0Vdc) HFE 100 300
(IC= 50 mAdc, VCE= 1.0Vdc) 60 -
(IC= 100 mAdc, VCE= 1.0Vdc) 30 -
Collector-Emitter Saturation Voltage (2)
(IC= 10 mAdc, IB= 1.0mAdc) VCE(sat) - 0.2 Vdc
(IC= 50 mAdc, IB= 5.0mAdc) - 0.3
Base-Emitter Saturation Voltage (2)
(IC= 10 mAdc, IB= 1.0 mAdc) VBE(sat) 0.65 0.85
(IC= 50 mAdc, IB= 5.0 mAdc) - 0.95 Vdc
Small-signal Characteristics
Current-Gain-Bandwidth Product fT MHz
(IC= 10 mAdc, VCE= 20 Vdc, f=100MHz) 300 -
Output Capacitance Cobo -
(VCB= 5.0 Vdc, IE=0, f=1.0MHz) 4.0 pF
Input Capacitance Cibo - pF
(VEB= 0.5 Vdc, IC=0, f=1.0MHz) 8.0
Input Impedance
(VCE= 10 Vdc, IC=1.0 mAdc, f=1.0 kHz) hie 1.0 10 k ohms
Voltage Feeback Radio
hre 0.5 8.0 x 10-4
(VCE= 10Vdc, IC=1.0 mAdc, f=1.0 kHz)
Small-Signal Current Gain
hfe 100 400
(VCE= 10Vdc, IC=1.0 mAdc, , f=1.0 kHz) -
Output Admittance 40
hoe 1.0