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SEMICONDUCTOR KHB6D0N40P/F/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KHB6D0N40P
A
O
This planar stripe MOSFET has better characteristics, such as fast C
F
switching time, low on resistance, low gate charge and excellent
E G DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for electronic ballast and B
A _
9.9 + 0.2
B 15.95 MAX
switching mode power supplies. Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
K P F _
2.8 + 0.1
FEATURES M G 3.7
L
H 0.5+0.1/-0.05
VDSS=400V, ID=6.0A J I 1.5
D J _
13.08 + 0.3
Drain-Source ON Resistance : N N H K 1.46
L _
1.4 + 0.1
RDS(ON)=1.0 @VGS=10V _
M 1.27 + 0.1
_
Qg(typ.)=21nC N 2.54 + 0.2
O _
4.5 + 0.2
1 2 3 P _
2.4 + 0.2
1. GATE
2. DRAIN Q _
9.2 + 0.2
MAXIMUM RATING (Tc=25 ) 3. SOURCE
RATING
TO-220AB
CHARACTERISTIC SYMBOL KHB6D0N40F UNIT
KHB6D0N40P
KHB6D0N40F2
KHB6D0N40F
Drain-Source Voltage VDSS 400 V
Gate-Source Voltage VGSS 30 V
@TC=25 6.0 6.0*
ID
Drain Current @TC=100 3.6 3.6* A
Pulsed (Note1) IDP 24 24*
Single Pulsed Avalanche Energy EAS 320 mJ
(Note 2)
Repetitive Avalanche Energy EAR 7.4 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 73 38 W
PD
Dissipation Derate above 25 0.59 0.3 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics KHB6D0N40F2
Thermal Resistance, Junction-to-Case RthJC 1.71 3.31 /W
Thermal Resistance, Case-to-Sink RthCS 0.5 - /W
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W
Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2007. 5. 10 Revision No : 0 1/7
KHB6D0N40P/F/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 400 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.54 - V/
Drain Cut-off Current IDSS VDS=400V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3A - 0.9 1
Dynamic
Total Gate Charge Qg - 21 25
VDS=320V, ID=6A
Gate-Source Charge Qgs - 3.6 4.4 nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 8.3 13
Turn-on Delay time td(on) - - 40
VDD=200V
Turn-on Rise time tr - - 50
RL=33 ns
Turn-off Delay time td(off) - - 200
RG=25 (Note4,5)
Turn-off Fall time tf - - 70
Input Capacitance Ciss - 822 1020
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz - 14 17 pF
Output Capacitance Coss - 97 120
Source-Drain Diode Ratings
Continuous Source Current IS - - 6
VGS Pulsed Source Current ISP - - 24
Diode Forward Voltage VSD IS=6A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=6A, VGS=0V, - 270 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 2.15 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =20.1mH, IS=6A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 6A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
2007. 5. 10 Revision No : 0 2/7
KHB6D0N40P/F/F2
2007. 5. 10 Revision No : 0 3/7
KHB6D0N40P/F/F2
2007. 5. 10 Revision No : 0 4/7
KHB6D0N40P/F/F2
2007. 5. 10 Revision No : 0 5/7
KHB6D0N40P/F/F2
2007. 5. 10 Revision No : 0 6/7
KHB6D0N40P/F/F2
2007. 5. 10 Revision No : 0 7/7