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SEMICONDUCTOR KTB1370
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
A C
DIM MILLIMETERS
F
FEATURES S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
High Collector Current : IC=-7A. E
C _
2.70 + 0.3
B
Low Collector-Emitter Saturation Voltage. D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
: VCE(sat)=-0.5V(Max.) at IC=-4A. F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
MAXIMUM RATING (Ta=25 ) D D N _
2.54 + 0.1
P _
6.8 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT Q _
4.5 + 0.2
R _
2.6 + 0.2
Collector-Base Voltage VCBO -100 V N N H S 0.5 Typ
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -5 V
1. BASE
Q
1 2 3
Collector Current IC -7 A 2. COLLECTOR
3. EMITTER
Base Current IB -1 A
Collector Power Dissipation (Tc=25 ) PC 30 W
TO-220IS
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -5 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -5 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -80 - - V
hFE(1) (Note) VCE=-1V, IC=-1A 70 - 240
DC Current Gain
hFE(2) VCE=-1V, IC=-4A 30 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-4A, IB=-0.4A - -0.3 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-4A, IB=-0.4A - -0.9 -1.4 V
Transition Frequency fT VCE=-4V, IC=-1A - 10 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 250 - pF
OUTPUT
Turn-On Time ton - 0.4 -
I B2
I B2
Switching -I B1 10
Storage Time tstg I B1
- 2.5 - S
Time
20