phb55n03t_1.pdf part of Philips phb55n03t 1 phb55n03t_1.pdf, . Electronic Components Datasheets Active components Transistors Philips phb55n03t

Text preview for : phb55n03t_1.pdf part of Philips phb55n03t 1 . Electronic Components Datasheets Active components Transistors Philips phb55n03t_1.pdf

Back to : phb55n03t_1.pdf | Home

Philips Semiconductors Product specification

TrenchMOSTM transistor PHB55N03T
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 30 V
suitable for surface mounting using ID Drain current (DC) 55 A
'trench' technology. The device Ptot Total power dissipation 103 W
features very low on-state resistance Tj Junction temperature 175