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2SK3077
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
(Note)The TOSHIBA products listed in this document are intended for Unit: mm
high frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Output Power : PO = 15.0 dBmW (Min.)
Gain : GP = 15.0 dB (Min.)
Drain Efficiency : D = 20% (Typ.)
MAXIMUM RATINGS (Ta = 25