rsj550n10.pdf part of Rohm rsj550n10 rsj550n10.pdf, . Electronic Components Datasheets Active components Transistors Rohm rsj550n10.pdf text manual preview

Text preview for : rsj550n10.pdf part of Rohm rsj550n10 . Electronic Components Datasheets Active components Transistors Rohm rsj550n10.pdf

Back to : rsj550n10.pdf | Home

Data Sheet

4V Drive Nch MOSFET
RSJ550N10

Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET LPTS
10.1 4.5
1.3

Features

9.0
13.1
1) Low on-resistance. 1.24

1.0
2) High Power Package.

3.0
2.54 0.4

1.2
0.78
3) 4V drive. 5.08 2.7
(1) (2) (3)

Application
Switching

Packaging specifications Inner circuit
Package Taping 1

Type Code TL
Basic ordering unit (pieces) 1000 2

RSJ550N10

(1) (2) (3)
(1) Gate
(2) Drain 1 ESD PROTECTION DIODE
(3) Source 2 BODY DIODE

Absolute maximum ratings (Ta = 25C)
Parameter Symbol Limits Unit
Drain-source voltage VDSS 100 V
Gate-source voltage VGSS 20 V
Continuous ID *3 55 A
Drain current
Pulsed IDP *1 110 A
Source current Continuous IS *3 55 A
(Body Diode) Pulsed ISP *1 110 A
Power dissipation PD *2 100 W
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C
*1 PW 10s, Duty cycle1%
*2 TC=25