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KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE AMPLIFIER
LOW SPEED SWITCHING APPLICATIONS D-PAK
D-PACK FOR SURFACE MOUNT
APPLICATIONS
Load Formed for Surface Mount Application(No Suffix)
Straight Lead (I.ACK, "- I
Suffix) 1
Electrically Similar to Popular TIP31 and TIP31C
ABSOLUTE MAXIMUM RATINGS 1. Base 2. Collector 3. Emitter
Characteristic Symbol Rating Unit
I-PAK
Collector Base Voltage : KSH31 VCBO 40 V
: KSH31C 100 V
Collector Emitter Voltage : KSH31 VCEO 40 V
: KSH31C 100 V
Emitter Base Voltage VEBO 5 V 1
Collector Current (DC) IC 3 A
Collector Current (Pulse) IC 1 A
1. Base 2. Collector 3. Emitter
Base Current IB 1 A
Collector Dissipation ( T C=25 &) PC 15 W
Collector Dissipation (T A=25 &) PC 1.56 W
Junction Temperature TJ 150 &
Storage Temperature T STG -65 ~ 150 &
ELECTRICAL CHARACTERISTICS (Tc =25&)
Characteristic Symbol Test Conditions Min Max Unit
Collector Emitter Sustaining Voltage : KSH31 VCEO (sus) IC = 30mA, IB = 0 40 V
: KSH31C 100 V
Collector Cutoff Current : KSH31 ICEO VCE = 40V, IB = 0 50 uA
: KSH31C VCE = 60V, IB = 0 50 uA
Collector Cutoff Current : KSH31 ICES VCE = 40V, VBE = 0 20 uA
: KSH31C VCE = 100V, VBE = 0 20 uA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 1 mA
* DC Current Gain hFE VCE = 4V, IC = 1A 25
VCE = 4V, IC = 3A 10 50
* Collector Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 375mA 1.2 V
* Base Emitter On Voltage VBE(on) VCE = 4A, IC = 3A 1.8 V
Current Gain Bandwidth Product fT VCE = 10V, IC = 500mA 3 MHz
f = 1MHz
% Pulse Test : PW 300uS, Duty Cycle2%
KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR
KSH31/31C NPN EPITAXIAL SILICON TRANSISTOR