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2ST5949

High power NPN epitaxial planar bipolar transistor

Features
High breakdown voltage VCEO = 250 V
Complementary to 2ST2121
Typical ft = 25 MHz
Fully characterized at 125 oC

Application
1
Audio power amplifier
2
TO-3
Description
The device is a NPN transistor manufactured Figure 1. Internal schematic diagram
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.

Table 1. Device summary
Order code Marking Package Packaging

2ST5949 2ST5949 TO-3 tray

November 2008 Rev 4 1/8
www.st.com 8
Absolute maximum ratings 2ST5949

1 Absolute maximum ratings

Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 250 V
VCEO Collector-emitter voltage (IB = 0) 250 V
VEBO Emitter-base voltage (IC = 0) 6 V
IC Collector current 17 A
ICM Collector peak current (tP < 5 ms) 34 A
PTOT Total dissipation at Tc = 25