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KTC4374

TRANSISTOR (NPN) SOT-89-3L

FEATURES
Small Flat Package 1. BASE

General Purpose Application 2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 80 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 400 mA
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 80 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V
Collector cut-off current ICBO VCB=80V,IE=0 100 nA
Emitter cut-off current IEBO VEB=5V,IC=0 100 nA
VCE=2V, IC=50mA 70 240
DC current gain hFE
VCE=2V, IC=200mA 50
Collector-emitter saturation voltage VCE(sat) IC=200mA,IB=20mA 0.4 V
Base-emitter voltage VBE VCE=2V, IC=5mA 0.55 0.8 V
Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 10 pF
Transition frequency fT VCE=10V,IC= 10mA 100 MHz

CLASSIFICATION OF hFE
RANK O Y
RANGE 70